发明名称 Diode with schottky barrier
摘要 <p>The semiconductor body is raised locally from the surrounding monocrystalline material and a metal layer is applied to this raised portion, forming a metal semiconductor barrier. Specif. the barrier metal consists of Au, Mo, Cr, Ni, Pd, W, Sn, platinum silicide or mixtures thereof, while the semi-conductor body consists of Si.</p>
申请公布号 FR2058385(A1) 申请公布日期 1971.05.28
申请号 FR19700022206 申请日期 1970.06.17
申请人 IBM 发明人
分类号 H01L29/872;H01L21/00;H01L21/762;H01L23/29;H01L29/00;H01L29/47;(IPC1-7):01L7/00;01L9/00 主分类号 H01L29/872
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