I SIDLED ORIENTERAD HALVLEDARANORDNING

摘要

Lateral type semiconductor devices are provided which can withstand a high applied reverse voltage and can be effectively employed in semiconductor integrated circuits with an enhanced integration density. These lateral type semiconductor devices include therein an island region formed in a semiconductor supporting region and a diffusion region formed in the island region. The radius of curvature at the pn junction surface of the diffusion region is selected to be at least 1.5 times larger than the depth of the diffusion region. The diffusion region includes electrode mounting portions of large area and the remaining portions having the form of a fine line.