发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To obtain a complementary MOS inverter with less power supply current by providing a voltage converting circuit to a power terminal of the complementary MOS inverter and further providing a feedback circuit to an output terminal of the inverter. CONSTITUTION:An n-channel MOS transitor (TR) 4 and a p-channel MOS TR2 form the complementary MOS inverter. A voltage converting circuit 101 is provided to decrease a power supply voltage of the 1st stage inverter to a prescribed level and to eliminate a through-current at an input high level voltage V1H. Moreover, the feedback circuit 102 is provided to boost a high level voltage of the 1st stage inverter output decreased resulting from the insertion of the voltage converting circuit 101 to the level of a power supply voltage VCC. That is, the output level is boosted to the power supply voltage VCC by providing the feedback circuit 102 for a signal in-phase to the output signal thereby eliminating a through-current flowing to a circuit block 103 of the next stage.
申请公布号 JPS6070822(A) 申请公布日期 1985.04.22
申请号 JP19830177953 申请日期 1983.09.28
申请人 HITACHI SEISAKUSHO KK 发明人 SASAKI TOSHIO;MINATO OSAMU;MASUHARA TOSHIAKI
分类号 H03K19/0948;H03K19/00 主分类号 H03K19/0948
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