| 摘要 |
PURPOSE:To decrease crosstalk irrespectively of whether a distinct coloring or discoloring threshold voltage exists or not by forming an electrocoloring element using a solid electrolyte layer onto a switching matrix circuit using a thin film type field effect transistor (TFFET). CONSTITUTION:An oxide mixture (ITO) composed of In2O3 added with SnO2 is deposited by evaporation on a TFFET matrix to form a transparent electrode and is photoetched to form picture element electrodes 2 into a dot matrix shape. One end thereof is electrically connected to a drain electrode 3e. An insulating layer 5 between SiO2 layers is formed on the elements 2 except the parts corresponding to the dots and the TFFET matrix and a WO3 film is formed by vapor deposition and thereafter an electrocoloring layer 4 of WO3 is formed only on the parts corresponding to the dots of the electrodes 2. A soln. contg. a high polymer resin, inorg. ion conductive material and plasticizer is further coated thereon and is dried to form an ion conductor layer 6. ITO or gold is deposited by evaporation to form a counter electrode 7 over the entire surface of the element and a sealing layer 8 thereon. The crosstalk is considerably decreased by the above-mentioned constitution. |
