发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable to obtain a favorable bonding property by a method wherein a ball part formed on a bonding wire made of aluminum or aluminum alloy is selected its hardness in a specific extent. CONSTITUTION:A ball part 6a formed on a bonding wire made of aluminum or aluminum alloy has been selected its hardness at a Vickers hardness of about 30-50. A bonding of the bonding wire 6 as aforementioned is performed by the following method, for example. The ball part 6a is formed at the point of the bonding wire 6 by discharge between the point of the wire 6 held on a wire bonder and the electrode 9 of the wire bonder. Immediately after this, the ball part 6a is sprayed with low-temperature nitrogen, etc., and is quenched, thereby enabling to obtain a favorable ball hardness.
申请公布号 JPS6070750(A) 申请公布日期 1985.04.22
申请号 JP19830177944 申请日期 1983.09.28
申请人 HITACHI SEISAKUSHO KK 发明人 OKIKAWA SUSUMU;SUZUKI HIROMICHI;KITAMURA WAHEI;MIKINO HIROSHI
分类号 H01L21/60;H01L21/48 主分类号 H01L21/60
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