| 摘要 |
PURPOSE:To prevent intrusion of an impurity into a grown film by integrating with time the emission intensity of the specific wavelength in the emission spectra generated in the stage of a sputter treatment and monitoring the consumption of a sputter target. CONSTITUTION:A sensor consisting of quartz window glass 18, an interference filter 19 and a photodiode 20 is installed to a part of the circumferential wall near the target 12 of a vacuum chamber 10. High-frequency electric power 16 is impressed between the target 12 and a wafer 15 by the conventional method to perform sputtering. The light of the specific wavelength in the generated emission spectra is selectively detected by the sensor and the light intensity is integrated by an integrator. The sputter treatment is continued while the consumption of the target is monitored in the above-mentioned way and when the remaining part of the target 12 attains a prescribed thickness, the sputter treatment is stopped and the target 12 is replaced. The target material is thus effectively utilized. |
