| 摘要 |
<p>PURPOSE:To improve the reliability of an E<2>PROM provided with an internal boosting circuit by providing a boosted voltage switching circuit between an address decoder and a memory cell array and supplying a boosted voltage in the boosting circuit only to a selected row of the memory cell array and cutting off the boosted voltage to non-selected rows to prevent a current from being flowed out to the output stage of the address decoder. CONSTITUTION:A boosted voltage switching circuit 17 is provided in the output terminal of an address decoder 13, and a high voltage (for example, VH=20V) obtained by boosting a power source voltage is supplied to a selected row, for which the output of the decoder 13 is ''1'', of a memory cell array 11 in case of rewrite, and a read voltage approximating the power source voltage is supplied there in case of read; and zero voltage is supplied to left non-selected rows, for which the output of the decoder 13 is ''0'', without flowing-out of the current.</p> |
