| 摘要 |
PURPOSE:To improve the photoconductive characteristics by providing a support, the first photoconductive amorphous layer containing Si atoms and Ge atoms, the second amorphous layer containing Si atoms and N atoms in such a manner the first layer contains conductive substance at the support side and contains O atoms. CONSTITUTION:A photoconductive member 100 is formed of an amorphous layer 102 formed of an amorphous material having photoconductivity including Si atoms and Ge atoms as bases and at least hydrogen atoms or halogen atoms, and an amorphous layer 103, the germanium atoms contained in the layer 102 are distributed continuously uniformly in planar direction parallel to the thicknesswise direction of the layer 102 and the surface of the support 101. In the layer 102, a layer region containing substance of P type or N type for controlling the conductivity at the support side, and contains O atoms. Thus, the photoconductive characteristics are always stable, and photosensitivity characteristics of long wavelength side and excellent light-fatigue resistance are provided. |
