| 摘要 |
PURPOSE:To improve the photoconductive characteristics by forming an amorphous layer which containing Si atoms, Ge atoms and conductive substance, O atoms on a support, and sequentially laminating an amorphous layer having photoconductivity with Si atoms and further an amorphous layer with Si atoms and N atoms on the layer. CONSTITUTION:A photoconductive member 100 is formed of an amorphous layer 102 and an amorphous layer 105 formed with a free surface 106 on one end on a support 101. The layer 102 has Si atoms as a base and any of H atoms or halogen atoms, and laminated with a layer region 103 containing Ge atoms uniformly in thicknesswise direction and planar direction and a layer region 104 containing photoconductivity. In the region 103, P type or N type impurity for controlling the conductivity is contained. O atoms are contained in the layer 102, and Si atoms and N atoms are contanied in the layer 105. Thus, the photoconductive characteristics are always stable, and photosensitivity characteristics of long wavelength side and excellent light fatigue resistance are provided. |
