| 摘要 |
PURPOSE:To allow a large current to flow efficiently to a P-MOSFET without increased channel width by increasing a gate voltage applied to a gate of the P-MOSFET by means of an inverter circuit. CONSTITUTION:With a terminal N1 at 0V, the P-MOSFETT1 is turned on, a threshold value of an N-MOSFETT2 is 4V and a level of a terminal 3 is -3V, then the N-MOSFETT2 is turned off and since a power supply voltage VCC is 5V, the level of a point N2 goes to 5V and the P-MOSFETT3 is turned off. On the other hand, since the P-MOSFETT1 is turned off and the N-MOSFETT3 is turned on with a terminal N2 of 5V, the level of the point N2 goes to -3V, the P-MOSFETT3 is turned on and since a voltage of -8V is impressed between the gate and source, a large current is supplied to the P-MOSFETT3, and more stable large current supply is attained in comparison with the increase of the channel width. |
