发明名称
摘要 PURPOSE:To perform stable operation that can be driven by low voltage and is free from voltage drop with time by forming the innermost layer of the phase matching films of multilayer structure provided on the surface of a thin plate of electrooptic crystal and using the same also as an electrode. CONSTITUTION:Thin films of In2O3, SiH, SiO2 of 2.0, 3.5, 1.45 refractive indices n1-n3 respectively are disposed on the surfaces of a thin plate 1 (refractive index n0=2.4) of, for example, Bi12SiO20, so as to satisfy the relations n2>n0>n1, n3. The conductive thin film 7 In2O3 is used as an electrode, and voltage V is applied. It is possible to make the phase deviations of the P and S polarized components of the rays L and P incident to the inside of the thin plate 1 equal by adjusting the film thicknesses d1 and d2 of the layers 7 and 8. Thereby, the stable operation that can be driven by low voltage and is free from voltage drop with time is accomplished.
申请公布号 JPS6015254(B2) 申请公布日期 1985.04.18
申请号 JP19800120193 申请日期 1980.08.30
申请人 FUJITSU LTD 发明人 SHIRASAKI MASATAKA;OBOKATA TAKESHI
分类号 G02B6/12;G02B26/02;G02F1/03;G02F1/313 主分类号 G02B6/12
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