| 摘要 |
PURPOSE:To provide an apparatus capable of continuously depositing a thin film, in the coaxial type titled apparatus, by specifically providing the passage of a flexible substrate between a thin film forming chamber and a preparatory chamber for preventing noxious gas form mixing into said thin film forming chamber. CONSTITUTION:A cylindrical thin film forming chamber 13 having a high frequency electrode 12 on the center axis thereof and a preparatory chamber 14 adjacent thereto are communicated by passages 15, 16 each having a rectangular cross-sectional area while the chamber 14 and a film storing chamber 17 are communicated similarily by passages 18, 19. The chambers 13, 14, 17 are evacuated while reactive gases are introduced into the chamber 13 and plasma is generated by the electrode 12. A flexible film substrate 12 being a thin film depositing substance is delivered from the reel 22 in the chamber 17 and enters the chamber 13 through the passage 18, the chamber 14 and the passage 15 and passes the passage 27 by a guide frame 26 to continuously deposit a thin film onto the surface thereof. Subsequently, the substrate 21 is wound up by a reel 23 through the passage 16, the chamber 14 and the passage 19. |
