发明名称 THIN FILM TRANSISTOR SUBSTRATE
摘要 <p>PURPOSE:To permit easy control of an exact operating voltage by providing conductive films insulated from the gate wires of thin film transistors disposed in matrix as counter electrodes of capacitors and providing light shielding films. CONSTITUTION:Conductive surfaces 1b, 1b' insulated and separated from gate wires 1a, 1a', 1a'' are formed on a substrate S on which gate wires 1a, 1a', 1a'' of a thin film transistor array are formed with a display device using the thin film transistor array as a switching element for driving. The surfaces 1b, 1b' are used as the counter electrodes of capacitors for accumulating electric charge. Since the counter electrodes of the capacitors are formed isolatedly from the gate wires in the above-mentioned way, a driving voltage for writing can be easily set without considering the influence of the potential change of the gate wires. The exact control of the operating voltage is thus easily accomplished and the stable display is made possible without change in the display condition owing to a change in the potential of the gate wires.</p>
申请公布号 JPS6068326(A) 申请公布日期 1985.04.18
申请号 JP19840148309 申请日期 1984.07.16
申请人 CANON KK 发明人 OSADA YOSHIYUKI;SUGATA MASAO;HATANAKA KATSUNORI;OOKUBO YUKITOSHI;NAKAGIRI TAKASHI
分类号 H01L29/78;G02F1/133;G02F1/1335;G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L29/786 主分类号 H01L29/78
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