| 摘要 |
PURPOSE:To improve absorption spectrum characteristics on the long wavelength side by forming two amorphous silicon layers different in compsn. CONSTITUTION:A photoreceptive layer 102 having sufficient volume resistivity and photoconductivity and contg. N-atom is formed on a substrate 101. This layer 102 is composed of the layer 103 made of a(amorphous)-Si(H,X) and the second layer 104 made of a-SiGe(H,X) located on the layer 103, and each of both layers can generate carriers on receiving light having desired wavelengths. Conductivity is adjusted by adding a conductivity governing substance, i.e., impurity for converting Si or Ge into p type and n type. C-atom may be incorporated in the photoreceptive layer to enhance sensitivity and dark resistance, etc. |
