发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To enable the reduction of noise by multimodes and to contrive to facilitate the design by obtaining the reduction in astigmatic difference and the symmetry and stability of a far field pattern by a method wherein the titled device is enabled to have both properties of gain guide type and index guide type. CONSTITUTION:A current restricting region layer 17 serving as a photo absorbing layer having a smaller energy gap than a clad layer 15 and having the conductivity type different from that of the layer 15 is formed in the layer 15, a current concentration part of stripe form being formed by providing a lack part 17a of stripe form at the center of the layer 17 and thus constructing an internal stripe structure. The width W of the part 17a is selected at 3-5mum. Further, the difference in effective refractive index DELTAn(n-nS) when the refractive index of the part corresponding to the part 17a 9s (n), and the refractive index nS under the layer 17 is nS is 8X10<-4>-2X10<-3>.
申请公布号 JPS6066894(A) 申请公布日期 1985.04.17
申请号 JP19830175425 申请日期 1983.09.22
申请人 SONY KK 发明人 MATSUDA OSAMU;HORII SHINICHI;SATOU HIROMICHI
分类号 H01S5/00;H01S5/20;H01S5/223 主分类号 H01S5/00
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