| 摘要 |
PURPOSE:To contrive the reduction of the titled element in weight and the improvement of its environmental resistance by a method wherein an active element layer for photoelectric conversion is composed of a thin film semiconductor layer, with a glass slip as a substrate. CONSTITUTION:A conductive film 2 is formed on a thin glass slip 1, and a GaAs series thin film solar battery semiconductor layer 3 is formed on the substrate 1 by the process of multilayer epitaxial vapor growth. After partial removal of the grown layer, an interconnector 8 is connected on the film 2, and an electrode 9 is formed on the surface of the semiconductor layer 3, thereafter an interconnector 10 is connected. Next, a thin glass slip 12 is adhered thereon and made to act as a cover glass for shielding against radiations. |
