| 摘要 |
PURPOSE:To enable the titled device controlled on high output lateral mode to be manufactured in a mass by the vapor phase growing method by a method wherein an n type active layer, a clad layer or an intermediate layer is inverted into p type in the region under a groove. CONSTITUTION:An n type clad layer 2, active layer 3 and an n or p type clad layer 4 are successively grown on an n type semiconductor substrate 1, resulting in the formation of a double hetero junction. The intermediate layer 5 grown and formed on the clad layer 4 and having the reverse conductivity type to that of the layer 4 an n type current block layer 6 grown and formed on the layer 5 and formed in such a manner a stripe groove 7 reaching the layer 5 does not reach the resonator end surface, and a p type coat layer 9 grown and formed on the layer 6 by including the groove 7 are provided. Besides, the active layer 3, clad layer 4, or intermediate layer 5 is inverted into p type in the region under the groove 7. |
