High density semiconductor integrated circuit layout - has reference potential connections to each circuit made by conductive channels running in same direction

摘要

Each circuit includes a first device including an elongated impurity region and a set of other impurity regions either in, or in contiguous relationship with, the elongated region to form a set of diode junctions. The elongated region is capable of containing a predetermined maximum number of the other impurity regions. A second device is located adjacent the narrow side of first device. A first set of first level conductors extends over the elongated region orthogonally with respect to the elongated direction and are interconnected to selected ones of the other impurity regions. Another conductor in a second level atop the substrate is connected to an impurity region of the second device and extends substantially parallel to the elongated direction.