发明名称 POSITION ALIGNING METHOD
摘要 PURPOSE:To accurately align the position of grating on a wafer and generated interference fringe by reflecting or transmitting the light flux having passed two diffraction gratings on a reticle with the diffraction grating on the wafer. CONSTITUTION:The light fluxes 12, 13 in the same phase are vertically directed to the gratings 14, 15 on a reticle, an interference fringe F is formed by crossing the diffracted lights 16, 17 on a wafer W at a crossing angle 2theta and it is aligned to the grating G provided on the wafer. Rotations PHI, PSI of grating G and fringe F in the afer surface and incident surface are adjusted by reducing a wafer surface and incident surface are adjusted by reducing a number of moire-image interference fringes through fine adjustment of wafer. The diffracted lights 16, 17 sent from the grating G having almost the same pitch as the pitch A of interference fringe determined by the wavelength of light and incident angle theta are collected and interfered again. Light intensity to be observed depends on the angle of detector D and has a peak value. Therefore, a detector is fixed at the peak intensity position and relative position (x) of fringe F and grating G is changed. Since light intensity periodically changes for each pitch of grating G, relative position can be obtained from measurement of light intensity and highly accurate position aligning can be realized.
申请公布号 JPS6066819(A) 申请公布日期 1985.04.17
申请号 JP19830175354 申请日期 1983.09.22
申请人 MATSUSHITA DENKI SANGYO KK 发明人 NOMURA NOBORU;KUGIMIYA KOUICHI;MATSUMURA RIYUUKICHI;YONEZAWA TAKETOSHI
分类号 H01L21/30;G03F7/20;G03F9/00;G05D3/00;G05D3/12;H01L21/027 主分类号 H01L21/30
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