| 摘要 |
PURPOSE:To realize molecular beam epitaxy even after the patterning by the molecular beam epitaxy growth after executing the patterning under the condition that arsenic is deposited on the clean surface of a semiconductor crystal. CONSTITUTION:Arsenic is deposited on the clean surface of semiconductor crystal while the surface is kept clean. Next, arsenic surface is coated with a photo resist material, a pattern is printed thereon and etching is executed to the surface. Thereafter, a metal is vacuum-deposited and the photoresist material is exfoliated by the lift-off method. When arsenic remaining in the molecular beam epitaxy apparatus is vaporized by heating, the semiconductor crystal surface is kept clean in the area where arsenic remains and the precess for cleaning the surface of semiconductor crystal is no longer required and therefore epitaxy growth can be realized directly on this surface. In this case, a polycrystal is precipitated on the surface of metal but the polycrystal generally has a high resistance and it does not give influence on the desired performance of electron device. |
