发明名称 High-purity molybdenum target and high-purity molybdenum silicide target for LSI electrodes and process for producing the same.
摘要 <p>There is provided a high-purity molybdenum target or high-purity molybdenum silicide target for LSI electrodes which comprises a high-purity metallic molybdenum having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb. Further, a process is provided for producing such target comprising a wet purification processing followed by a series of dry processings.</p>
申请公布号 EP0137166(A2) 申请公布日期 1985.04.17
申请号 EP19840108940 申请日期 1984.07.27
申请人 NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION;NIHON KOGYO KABUSHIKI KAISHA 发明人 OIKAWA, HIDEO C/O ATSUGI ELECTRICAL COMM. LAB.;AMAZAWA, TAKAO C/O ATSUGI ELECTRICAL COMM. LAB.;HONMA, NAKAHACHIRO C/O MUSASHINO EL. COMM. LAB.;MIYAZAKI, HIDEO C/O CENTRAL LABORATORY;KYONO, IWAO C/O CENTRAL LABORATORY;MORI, NOBUYUKI;KATOH, YOSHIHARU C/O CENTRAL LABORATORY;KUROKI, MASAMI C/O CENTRAL LABORATORY
分类号 H01L29/78;C22B34/34;H01L21/28;H01L21/285;H01L29/49;(IPC1-7):H01L29/40 主分类号 H01L29/78
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