| 摘要 |
PURPOSE:To simplify the process not in a chemical manner by a method wherein a plurality of semiconductor elements consisting of lower electrodes, P-I-N junctions, upper electrodes, etc. are formed on an insulation substrate, and open grooves reaching the lower electrodes are formed therein by laser light irradiation when they are bored and connected to each other, thereafter a porous substance remaining the surface of the rim of the aperture is removed by the treatment with plasma containing a halogen element. CONSTITUTION:The lower electrode 7 constituting a discrete semiconductor element is provided on the insulation substrate 1 of glass or the like, and the junction of P-I-N, etc. is formed thereon, where the upper electrode 16 is mounted. Next, the open grooves 20 to connect these discrete elements are bored by laser light irradiation, and the electrode 7 is partly exposed, however, this manner causes the generation of porous residuals 18 and 17 at the rim of the surface and the bottom, respectively. Therefore, these residuals 18 and 17 are extinguished by further exposure of the substrate 1 to the atmosphere of a plasma containing a halogen element. |
