发明名称 PHOTOELECTRON IMAGE REDUCED PROJECTION TYPE ELECTRON BEAM EXPOSURE METHOD
摘要 PURPOSE:To reduce the adverse effect of a proximity effect by forming a reticle with a pattern consisting of a photoelectron generating film brought ot a porous state so that the mean electron-beam generating efficiency of the pattern is minimized with the increase of pattern size and executing reduced exposure. CONSTITUTION:A large number of holes (circular holes from which gold is removed) are formed to a large pattern 14 for a gold thin-film to shape a porous film, and a small pattern 13 is left as it is a conventional compact film. The hole diameter is formed in size such as approximately 0.2mumphi one, and formed in size in an extent that the hole is not made sure when a reticle with these patterns is reduction-projected. Accordingly, a proximity effect is reduced because the number of photoelctrons discharged per the unit area of the large pattern 14 is made smaller than that of the small pattern 13. The gold thin- film having the porous film quality can be formed by adjusting a sputtering method, through which gold is applied, or etching (containing lift-off) the film after coating.
申请公布号 JPS6066429(A) 申请公布日期 1985.04.16
申请号 JP19830175480 申请日期 1983.09.21
申请人 FUJITSU KK 发明人 YASUDA HIROSHI;KAWASHIMA KENICHI;BAN YASUTAKA
分类号 G03F7/20;H01L21/027;H01L21/30;(IPC1-7):H01L21/30 主分类号 G03F7/20
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