| 摘要 |
<p>PURPOSE:To increase the switching speed of a large capacity storage device consisting of MOSFETs as its main constitutional elements by increasing required nodes of an X decoder to a power supply voltage or more by capacity. CONSTITUTION:When address inputs A0-A6 are turned to L and an X decoder XXD1 is selected, the potential of nodes M, N are turned to L and H respectively. On the other hand, a node J is charged through an MOSFET611 which is ON at a time other than stand-by time and increased up to the potential of the power supply voltage Vcc or more by the capacity C1. The potential of a node K is also increased from the earth potential to the power supply voltage Vcc or more, the increased potential is suddenly impressed to the gate of an MOSFET624 and reverse phase voltage is impressed to the gates of the MOSFETs 624, 625, so that the driving force of the FET624 is increased by push-pull operation. Consequently, a word line is charged by a short time constant and the switching speed of the large capacity storage device consisting of the MOSFETs as its main constitutional elements is increased.</p> |
