| 摘要 |
PURPOSE:To enable to shorten channel length, and to enhance the degree of integration of an MOS integrated circuit device by a method wherein P-channel MOSFETs are constructed being integrated on a semiconductor substrate. CONSTITUTION:P<+> type diffusion layers 12, 13, a gate oxide film 14 and a gate electrode 15 are formed on the surface of an N type Si substrate 11 to form a P-channel MOSFET of channel length LP <=0.4mum. At the P-channel MOSFET holding holes as carriers, generation of hot electrons itself becomes extremely small, and when channel length is 0.4mum or less and even when at the degree of 0.1mum, a trapping phenomenon into the gate oxide film of hot electrons is not generated. |
