| 摘要 |
PURPOSE:To make high output operation with low threshold value current feasible and production easier by a method wherein a substrate held at high temperature for specific period of time is crystal-grown utilizing super-refrigerated solution and then a stepped part is selectively melt-back to form a self-aligned current strangulated part. CONSTITUTION:A stepwise different part is provided on a P type substrate 31 and an N type current strangulating layer 32 is grown on the surface of the substrate 31 not to disturb the stepwise shape of the substrate 31. Next a P type clad layer 33, an active layer 34, an N type clad layer 35 and an ohmic contact layer 36 are successively grown. When the P type clad layer 33 is grown, a step different part 37 is especially larger melt-back than flat parts 38, 39 positively utilizing the dependence of migration and melt-back upon facial direction in case of liquid crystal growth so that the substrate 31 and the P type clad layer 33 may be partially connected with each other. A laser subject to high output operation with low threshold value current may be produced since the current may be concentrated in the bending span A, B to minimize leakage current. |
