| 摘要 |
PURPOSE:To increase storage capacitance, to improve a soft-error resistance by alpha-rays and to reduce an occupying area by forming a groove at a node in a memory cell and forming a layer having a conduction type reverse to a substrate to the side surface of the groove and base thereof in a resistance load type SRAM. CONSTITUTION:A groove 104 is shaped from a window 103 in a gate oxide film 102 on a P-type Si substrate 101, and coated with P-added poly Si 105, 106. An N<+> diffusion layer 107 is formed from poly Si 105, and As ions are implanted to shape N<+> layers 108, 109. An opening 111 is bored to an inter-layer insulating film 110, and poly Si 112 having high resistance connected to the poly Si 105 is formed. An Al electrode 115 is connected to the N<+> layer 109 through an opening 114 in an inter-layer insulating film 113. Elements are isolated by a field oxide film 116 and a P-type channel stopper 117. In a memory cell according to the constitution, the quantity of charges stored by a P-N junction on the side surface of the groove is increased, and a soft-error resistance by alpha-rays is improved while an occupying area can be reduced without minimizing the capacitance area of the cell. |
