| 摘要 |
PURPOSE:To prevent the positional displacement of a sample on evacuation, on the replacement of a gas in a reaction furnace and on vapor growth, and to form a growth layer, which has uniform film thickness and a composition thereof is stable, by forming a groove regulating movement in the lateral direction of a substrate to a sample support plate. CONSTITUTION:A sample susceptor 4 on which samples 2 and a sample support plate 3 are placed is arranged in a growth furnace 1. A groove 17 is formed previously to the sample support plate 3 while being conformed to the shape of a foundation substrate. It is desirable that the depth of the groove 17 is made shallower than the thickness of the substrate. The sample susceptor 4 is turned by a rotary mechanism 6 through a shaft 5. A gas draw-out duct 9 is connected to the lower section of the growth furnace 1, a gas introducing duct 7 is connected to the upper section of the reaction furnace 1, a raw material gas introduced from the duct 7 is pyrolyzed in the growth furnace 1 to grow crystals on the substrates 2, and the gas is discharged from the gas draw-out duct 9, introduced to a waste gas treater 14 through a three-way valve 10, and treated. A vacuum pump 13 is connected to the three-way valve 10, and the gas in the growth furnace is discharged prior to crystal growth. |
