| 摘要 |
PURPOSE:To make perpendicularity perfect, minimizing surface damage and improving reproducibility by a method wherein a semiconductor compound is soaked in etching solution to be etched by means of irradiating the surface of multi-epitaxial layer of the semiconductor compound with highly parallel laser beams in the vertical direction. CONSTITUTION:A GaAs crystal 2 as a work covered with masks 1 preliminarily formed into required opaque pattern is soaked in etching solution 4 contained in a vessel 3. Then the beams of a short wave length laser 5 with powerful output such as argon laser etc. are formed into even luminous flux 7 utilizing a beam expander 6 to perform etching operation for specific period of time by means of vertically irradiating the surface of GaAs crystal with the laser luminous flux 7. At this time, the etching operation into the crystal 2 may selectively advance toward the bottom irradiated with the laser beams to form almost perpendicular sides. |
