| 摘要 |
PURPOSE:To form minutely and moreover with high precision the gate electrodes of a high output field effect transistor having gates, sources and drains arranged in a comb type by a method wherein a metal is evaporated in oblique directions from both the sides of high barriers provided to the parts to act as source electrodes. CONSTITUTION:Source and drain electrodes 21, 22 are formed alternately on a semiconductor substrate 20, barriers 23 are provided to the source electrodes 21, etching is performed through the opening parts of a photo resist 24 to form hollows 26, and a metal 28 is evaporated from a direction 27 making the angle 60 deg. with the surface of the substrate 20 to form gate electrodes 28' biased to the source electrode 21 sides in the hollows 26 on the left sides of the barriers 23. The parts on the opposite sides therefrom are hidden by the barriers 23, and not adhered with the metal 28. The substrate 20 is rotated at 180 deg., and gate electrodes 29' are formed biasing to the source electrode 21 sides in the hollows 26 on the right sides of the barriers 23. The resist 24 and the metals 28, 29 of the unnecessary parts are removed, and the barriers 23 are removed. |
