发明名称 DISTRIBUTED FEEDBACK TYPE SEMICONDUCTOR LASER
摘要 PURPOSE:To enable to draw out a portion of light as a monitor light by a method wherein a structure, wherein at least on way of two guide mechanisms of light, in other words, an active layer and an optical guide layer, is remained on the end surface of one side, which is obliquely formed in the title laser, is adopted as the structure of the laser. CONSTITUTION:An optical guide layer 12, an active layer 13, a clad layer 14 and a contact layer 15 are successively grown on an N type InP substrate 11, whereon a grating 18 has been formed. One part on each one side of the contact layer 15 and the clad layer 14 is removed by performing an etching for obtaining a DFB laser. A P-side electrode 16 is formed on the contact layer 15, while an N-side electrode 17 is formed on the lower surface of the substrate 11. Light principally propagates through the interiors of the active layer 13 and the optical guide layer 12. A portion of the light is scattered on an etching face 19, while the remaining light further propagates through the interiors of the active layer 13 and the optical guide layer 12. As an outgoing-light 113, which is emitted from a cleavage end face 111, is stronger than an outgoing-light 112, which is emitted from an etching-side end face 110, the outgoing- light 113 is used as a light for the use of practical optical communication, while the outgoing-light 112 can be used as a light for the use of monitor.
申请公布号 JPS6066491(A) 申请公布日期 1985.04.16
申请号 JP19830174626 申请日期 1983.09.21
申请人 NIPPON DENKI KK 发明人 YAMAGUCHI MASAYUKI
分类号 H01S5/00;H01S5/12 主分类号 H01S5/00
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