| 摘要 |
PURPOSE:To prevent a conversion into a P type of the inside of an N clad layer by interposing a layer, which has the same mixed-crystal ratio as a P type clad layer and contains Zn in concentration lower than the P type clad layer or does not contain Zn, between an active layer and the P type clad layer, to which Zn is doped, and growing the layer in a vapor phase. CONSTITUTION:A layer, which has the same mixed-crystal ratio as a P type clad layer and contains Zn in concentration relatively lower than the P type clad layer or does not contain Zn, is interposed between an active layer and the P type clad layer and grown in an epitaxial manner in a vapor phase. A GaAs buffer layer 12 to which Se is doped is formed on a substrate such as an N type low resistance GaAs substrate 11, which has (100) orientation and contains Si in high concentration, and an N type Ga1-xAlxAs N clad layer 13 to which Se of a mixed crystal ratio (x) of 0.45 is doped, the un-doped Ga1-xAlxAs active layer 14 of (x) of 0.15, an un-doped Ga1-xAlxAs interposing layer 15 of (x) of 0.45, the P clad layer 16, to which Zn is doped in high concentration and (x) thereof is 0.45, and a GaAs P contact layer 17 similarly containing Zn in high concentration are grown on the layer 12 in succession. |
