发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To reduce practically the applied voltage between the source and the drain of a transistor TR by connecting a circuit, which controls the power source voltage, to both ends of a complementary MOS inverter to control the applied voltage between the source and the drain of a turned-off TR. CONSTITUTION:TRs T3, T4, T5, and T6 are added as supply voltage controlling TRs. When an input point A is in the low level, TRs T3 and T1 are turned on, and TRs T2, T5, and T4 are turned off, and the power source voltage level is outputted to an output point B. Therefore, an earth point Q is held in a voltage which is lower than the gate input voltage of the TR T6 by a threshold value ¦VTP¦, and a differential voltage between the power source voltage and a voltage which is lower than the gate voltage of the TR T2 by the threshold ¦VTP¦ is applied between the source and the drain of the TR T2. Meanwhile, when the input point A is in the high level, TRs T2 and T5 are turned on, and TRs T3, T1, and T6 are turned off, and the earth level is outputted to the output point B. Therefore, an earh poing P is held in a voltage which is lower than the gate input voltage by a threshold ¦VTN¦, and a differential voltage between the power source voltage and a voltage which is lower than the gate voltage of the TR T4 by the threshold ¦VTN¦ is applied between the source and the drain of the TR T1.
申请公布号 JPS6066520(A) 申请公布日期 1985.04.16
申请号 JP19830174112 申请日期 1983.09.22
申请人 OKI DENKI KOGYO KK 发明人 KUMAGAI YUTAKA
分类号 H03K19/0948 主分类号 H03K19/0948
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