摘要 |
PURPOSE:To enhance the heat dissipation property to air, and to enhance reliability of a semiconductor element by a method wherein a heat sink having an unevenly shaped surface is provided. CONSTITUTION:A metal film 4, an insulating film 5 and a positive type photoresist film 6 are adhered on a semiconductor wafer 1 performed a process to make a semiconductor element as to carry out the desired function, the photoresist film 6 is processed to form a mask according to photolithography, and the insulating film 5 is etched. Only the photoresist films 6a are left by performing photolithography, and the left films are made as the position to perform element isolation later. Plated films 7 are formed selectively, the insulating film 5 is etched to be removed leaving the parts 5a, and a plated film 7 havng an uneven shape is formed. The photoresist film and the insulating film are removed, and a heat sink having a superior heat dissipation property is formed. |