发明名称 COMPOUND SEMICONDUCTOR VAPOR GROWTH DEVICE
摘要 PURPOSE:To prevent partial pressure rise, the crosscurrent of gas and the inflow of excessive gas into a reaction furnance generated with the changerover of gas flow paths by mounting a gas flow regulator, which can changer over gas curent under the state in which the gas is flowed to either one or both of a mian flow path or a bypass flow path. CONSTITUTION:When the right side surface of a built-in part 307 is covered completely with a gas current distributing part 308, a raw material gas is introduced to a reaction furnace by 100% through a main flow path piping 303. When the gas current distributing part 308 is turned in the counterclockwise direction only by an angle of theta, gas current is distributed to the main flow path 303 and a bypass flow path 306, but a space sectional-area communicated with the main flow path 305 is narrowed only by a section that a space sectional area (a black section) communicated with the bypass flow path 306 is windened becuase the gas current distributing part 308 is turned only by theta. Accordingly, when the gas flows to a downstream through a gas flow-path changeover regulator on the changeover of the gas current, the gas flows to the downstream at all times through the gas flow-path regulator not only on the completion of the changeover of the gas but also on the midway of changeover.
申请公布号 JPS6066421(A) 申请公布日期 1985.04.16
申请号 JP19830174293 申请日期 1983.09.22
申请人 TOSHIBA KK 发明人 NAKANISHI TAKATOSHI
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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