| 摘要 |
PURPOSE:To realize liquid phase epitaxial growth, in which edge growth is not generated in the direction parallel with the direction of sliding, easily, and to inhibit the generation of misfit dislocation by bringing a growth solution into contact with a substrate crystal and a protective crystal. CONSTITUTION:A substrate crystal 14 is received in a susceptor 11 for a boat, a growth solution is received in a slider 12 for the boat, protective ceystals 17 with surfaces parallel with the direction of sliding of said sllder 12 are arranged in close vicinity to the surface of the substrate crystal 14, and said growth solution is brought into contact with the substrate crystal 14 and the protective crystals 17. An InP substrate 14, a face such as a (100) face thereof is used as a main surface, and the protective crystals such as InP protective crystals 17 are each received and arranged in the susceptor 11 and a guide 13. An InP meltback solution, an InP growth solution and an InGaAs growth solution are each received in holes 15 in the slider 12. A temperature is elevated to 680 deg.C in H2 atmosphere, kept for approximately 1hr and dropped, these components are melted back and an InP layer is grown, and an In0.53Ga0.47As layer is grown. |
