| 摘要 |
PURPOSE:To form a thick-film resist in fine width as submicron and a coating layer pattern through lift-off by making the size of an exposure patten by far untraviolet rays larger than an exposure patten by electron rays and duplex- exposing the resist. CONSTITUTION:Naphthoquinone-1,2-diazide-5-sulfonic acid ester (LMR) of novolac resin is dissolved in methyl cellosolve acetate and applied on a silicon substrate, and a resist film is formed. The substrate with the resist film is pre- baked, and the resist film is exposed through a contacting method by far untraviolet rays, and exposed by electron rays. The sample is baked after exposure, and the resist film is developed. When a coating layer is formed to the substrate with a resist pattern obtained, for example, aluminum is applied on the substrate through evaporation, and the resist film 2 is lifted off by dimethylformamide, a pattern of an aluminum metallic layer 4 in thickness such as 1mum one and width such as 0.5mum one is acquired. |
