| 摘要 |
PURPOSE:To reduce contact resistance by the connection of upper wirings and a lower wiring by forming a film consisting of Ti or TiSi or the like to the surface of the lower layer wiring and shaping a Ti film, etc. to at least a lower layer of the upper layer wirings. CONSTITUTION:A diffusion layer 12 and an insulating film 13 are formed to the surface of an Si substrate 11, electrode wirings are shaped by an Si wiring 14 by an Si film and a TiSi film 15 formed on the Si wiring through the insulating film 13, and electrode wirings composed of an electrode 17 consisting of Ti and an Al electrode film 18 formed on the electrode 17 are shaped through a contact hole bored to an inter-layer insulating film 16 formed on the electrode wirings. |
