发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE AND THE SAME DEVICE
摘要 PURPOSE:To prevent a moisture from immersing to a fuse or an electrode pad lower layer by testing part of the fuse and the electrode pad in the open state, repairing a defect, and then covering a necessary portion. CONSTITUTION:A passivation film 22 is covered on the overall surface of a DRAM, the film 22 on a fuse 4 and an electrode pad 20 is etched to form holes 21, 24. A probe 25 is contacted with the exhibited portion 20A of the pad 20 to flow a current in an internal circuit, thereby testing the characteristics. An overcurrent is flowed through the selected fuse 4 to fusion-break the narrow portion 4a in the central width on the basis of the test to countermeasure the defect. After the test is completed, a passivation film 27 is covered on the overall surface. Then, the films 27, 22 are etched to newly form a hole 28 to expose the pad 20B of the position different from a crack 28 occurred in the test. The completed DRAM is subjected to wiring-connection to electrode pads having no crack.
申请公布号 JPS6065545(A) 申请公布日期 1985.04.15
申请号 JP19830172990 申请日期 1983.09.21
申请人 HITACHI MAIKURO COMPUTER ENGINEERING KK;HITACHI SEISAKUSHO KK 发明人 UDOU SHINJI;HIROKI MASANORI
分类号 H01L21/66;G01R31/26;H01L21/31;H01L21/3205;H01L21/82;H01L21/8242;H01L23/52;H01L23/525;H01L27/10;H01L27/108 主分类号 H01L21/66
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