| 摘要 |
<p>PURPOSE:To smoothly dissiplate Joule heat generated by a semiconductor element by employing an iron mesh material as an intermediate layer of a sintered material, thereby improving the thermal conductivity of thicknesswise direction of a substrate material. CONSTITUTION:An intermediate layer 1 of coper or copper alloy sintered material 2 is composed of iron-nickel alloy, and a rate of occupying the mesh material is set by volumetric ratio to 30% or higher as an intermediate layer in the sintered material, and the thermal expansion coefficient of a substrate material is set to 10.0X10<-6>/ deg.C or less. For example, a wire material made of 36%-nickel- iron alloy (Amber) is used to form a wire gauze of 200 mesh. On the other hand, as a sintered material Cu power of -250 mesh is filled in a compression injection mold cavity, tapping is executed, the gauze material is disposed in parallel with the punch surface. Thereafter, the Cu powder is again filled, tapping is performed, and compression molding is performed, and then compression molded product is sintered at 800-900 deg.C.</p> |
