| 摘要 |
PURPOSE:To obtain a memory cell which can facilitate a small size and a high integration with extremely less software error occurred by alpha-particles by providing an absorber of reverse conductive type carrier in one conductive type semiconductor substrate. CONSTITUTION:Electrons are filled in an inverting layer formed under a polysilicon film 13 of the surface of a P type silicon substrate, the state that a memory cell stores ''0'' is balanced, and is not almost affected by the influence of alpha- particles. When alpha-rays are incident in the case that the memory cell stores ''1'' in the state that the inverting layer is vacant and the potential is high (e.g., 5V), produced electrons are flowed to the layer 17, and the potential is abruptly lowered. When the electrons are rapidly absorbed to an N type buried layer 16, they are affected by the potential rise of the film 13, and the potential of the inverting layer gradually rises. Normally, if the inverting layer potential is 3- 4V or higher, it is regarded to store ''1''. This semiconductor memory cell is maintained at the inverting layer potential at 3-4V even if the alpha-rays are incident thereon by regulating the time constant and the capacity. |
