| 摘要 |
PURPOSE:To obtain an optically high performance by limiting the thickness of a P type semiconductor block layer buried in an etched removed portion of an N type semiconductor light guide layer, thereby reducing a leakage current flowing except the active layer. CONSTITUTION:An N type photosemiconductor light guide layer 12, an N type or P type or true semiconductor active layer 13, and a P type semiconductor light guide layer 14 are continuously grown on an N type semiconductor substrate 11, part of a multilayer film remains in a striped state to each and remove the depth partly arriving at the multilayer film at the layer 12 for remaining in the striped state. This portion is buried with a P type semiconductor block layer 15 of the special thickenss and an N type semiconductor buried layer 16, and electrodes 19 are formed on the upper surface of the layer 16 and the lower layer of the substrate 11. The entire leakage current can be largely reduced by limiting the thickness of the layer 15 to 1mum<=t<=3mum. |
