| 摘要 |
PURPOSE:To enable the improvement of a semiconductor thin film even if the film is thick by a method wherein ion implantation is performed along a crystallographic axis of a low order to make amorphous only the disorderly region in the vicinity of a defect, after which recrystallization is done by annealing. CONSTITUTION:When ion is implanted in a substrate vertically, the part when a lattice defect 14 exists is made into an amorphous region 15 and the part except that is still a single crystal region 16. After that, heat annealing is done in a nitrogen atmosphere to cause recrystallization and the lattice defects in a recrystallization region 17 are reduced. The ion implantation is thus performed along the crystallographic axis of a low exponent when the defects exsisting in the thin film are reduced by ion implantation and annealing. Consequently, the vicinity of the defects can be selectively made to be amorphous and the damage upon a good crystalline region is less and also the range of thickness of a film which can be applied is enlarged by ion implantation along a low-order crystallographic axis. |
