摘要 |
PURPOSE:To protect a semiconductor element from outer air by forming an oxide layer of alumina at the periphery of a support which places a semiconductor element, thereby strengthening the bonding strength of an organic resin with sintered nonoxide. CONSTITUTION:A sputter alumina film 2 and a Cu-Mn metallized layer 3 is formed on a sintered silicon carbide plate 1, and a semiconductor placing substrate 10 is composed of them. A diode 4 is metal-bonded through a solder 5 to the Cu-Mn metallized layer, and an electrode terminal 6 is bonded through a solder 7 to the other part of the layer 3. Further, an electrode terminal 9 is bonded through a solder 20 at another Cu-Mn metallized layer 8 insulated and isolated on the plate 1 and the film 2. The diode 4 and the terminal 9 are electrically connected by an electrode plate 12. Further, a cap 11 of a sintered silicon carbide is bonded to a semiconductor placing substrate 10, and covered with an organic resin 13. |