| 摘要 |
PURPOSE:To suppress the generation and propagation of crystal dislocation in the preparation of a group III-V compound semiconductor single crystal by a liquid-encapsulated pulling process, by adding plural kinds of the group III and V elements of the periodic table other than the constituent elements of the compound semiconductor, as impurities. CONSTITUTION:The molten liquid in the crucible is covered with an inert encapsulation agent, and a group III-V compound semiconductor single crystal (e.g. indium phosphoride) is pulled up under high-pressure atmosphere through the encapsulation agent layer. In the above process, two or more kinds of group IIIand group V elements of the periodic table other than the constituent elements of the compound semiconductor are added as impurities to the system. For example, gallium and antimony are added as impurities in the preparation of indium phosphoride single crystal. The total concentration of the impurities can be made uniform throughout the whole grown crystal, and a high-quality single crystal free from dislocation or having low dislocation density can be produced. |
