| 摘要 |
PURPOSE:To obtain the desired capacitor capacity by burying the electrodes of the capacitor via an interval at an insulating film in a groove bored on an Si substrate, thereby increasing the area of the electrodes without increasing the area of the surface. CONSTITUTION:A lower resistance layer 8 of the same conductive type as an Si substrate is formed on the side wall of a groove 17 digged on the substrate 10, the electrodes 19 of the capacitor are buried in the groove, a plate 22 is further buried through an insulating film 15 to form a memory cell. The capacity is formed on a capacity insulating film 18, which is interposed between a capacitor electrode 19 and a plate 8, and a capacitor insulating film 15 interposed between the capacitor electrode 19 and the plate 22. When N type is used for the substrate and a P type epitaxial layer 21 is formed on the surface, the isolated plates 8 are all connected to the substrate 10 of N type. Since this Si substrate can be disposed at the ground potential, the influence of the remaining sound voltage is small. |
