| 摘要 |
PURPOSE:To reduce the floating capacity and to enable to form a pattern of a complicated and precise electronic circuit by forming a semiconductor conductive layer at part of a semi-insulating semiconductor substrate, partly forming a laser double hetero structure, and forming an electronic circuit out of a laser oscillating region. CONSTITUTION:A striped recess groove 17 is formed on an N type GaAs conductive layer 2, and an N type Ga0.6Al0.4As clad layer 3, a Ga0.95Al0.05As active layer 4, a P type Ga0.6Al0.4As clad layer 5, and a P type GaAs cap layer 6 are formed on an N type GaAs conductive layer 2. A laser element region remains, an N type GaAs semiconductor conductive layer 18, a semi-insulating GaAs substrate surface 19 are etched until they are exposed. Si ions are implanted to the exposed substrate to form the active region, electrode region and resistance region of the electronic circuit. Thus, the integration of the semiconductor laser element of the low threshold current value of the electronic circuit is facilitated, the connection of the laser to the circuit can be improved, thereby improving the high freuqncy characteristics. |
