| 摘要 |
PURPOSE:To obtain laser beams of a wavelength with a very favorable unity by a method wherein grooves are formed by performing an etching, which penetrates an isolating layer from the surface of a multilayer epitaxial layer and parts between the mutually adjoining grooves are respectively used as a resonator. CONSTITUTION:A compound semiconductor waveguide passage layer 3, which has a larger refractive index than that of a substrate 1 and has a same conductive type as that of the substrate 1, is formed on the compound semiconductor substrate 1. A compound semiconductor isolating layer 4, which has a smaller refractive index than that of the waveguide passage layer 3 and has a same conductive type as that of the waveguide passage layer 3, is formed on the waveguide passage layer 3. Multilayer epitaxial layers 5-7, which have respectively grown a double-hetero junction layer, are formed on the isolating layer 4. Etching grooves 10, which penetrate the isolating layer 4 from the surface of the epitaxial layer 7, are formed. Parts between the mutually adjoining grooves 10 are respectively used as a resonator and a plural number of short resonator lasers 11 are formed. By this constitution, laser beams of a single mode made to oscillate from the lasers 11 are conducted into the conductive waveguide 3 through the isolating layer 4. The laser beams are coupled with laser beams made to oscillate from other parts, the coupled laser beams become laser beams of a single wavelength and are emitted to the outside from the conductive waveguide 3. |
