| 摘要 |
PURPOSE:To form a resin film which has excellent heat resistance and sufficient thickness and which causes little current leakage, by applying a mixture of a polyimide resin precursor solution and an organosilicon compound solution on a silicon substrate and heating the mixture. CONSTITUTION:A solution of reactants, prepared by dissolving a diaminocarboxylic amide and an acid dianhydride as polyimide precursors in N-methyl-2- pyrrolidone and an organosilicon compound solution containing phosphorus are mixed. The obtained mixture is applied on a silicon substrate using a spinner, and heated. Thus, a resin film containing phosphorus and having Si-O-Si and polyimide structures is formed on the substrate. |
