| 摘要 |
PURPOSE:To protect a pattern or mark for pattern alignment by using a growing substrate having an area larger than the area subject to crystal growth, and by covering the portion other than the crystal growth area with a crystal growth inhibiting film. CONSTITUTION:After a desired pattern is formed on a growing substrate for crystal growth, it is requied to form another pattern in alignment with the pattern on the substrate. For this purpose, a growing substrate whose area is larger than the area 7 subject to grouwth is used, and an oxide or nitride film of e.g. SiO2 or Si3N4 is formed on the non-growing area 6 for inhibiting crystal growth from extending to the subject non-growing area. Alignment marks 8 of a cross shape, for example, are provided for later processes. A material and others for a crystal growth inhibiting layer should be selected appropriately according to a material used for crystal growth and growing conditions. |
